journal article·1990-06

Sealing of bore-holes in Si crystals by epitaxial overgrowth below 560� C

R. W�rschum, E. Bauser, H. -J. Queisser, H. -E. Schaefer

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

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References (10)

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4. T. Ohmi, K. Matsudo, T. Shibata, T. Ichikawa, H. Iwabuchi: Appl. Phys. Lett. 53, 364 (1988)10.1063/1.99914 ↗
5. P.D. Greene: In ISSCG (6th International Summer School on Crystal Growth, Lecture Notes Vol. 1, Edinburgh, 1986) p. 187
6. R. Linnebach, E. Bauser: J. Cryst. Growth 57, 43 (1982)10.1016/0022-0248(82)90246-9 ↗
7. D. Käss, M. Warth, W. Appel, H.-P. Strunk, E. Bauser: In Silicon Molecular Epitaxy, ed. by J.C. Bean (The Electrochemical Soc., Pennington 1985) Proc. Vol. 87-7, p. 250
8. E. Bauser: In Thin Film Techniques for Low-Dimensional Structures, ed. by R.F.C. Farrow, S.S.P. Parkin, P.J. Dobson, J.H. Neave, A.S. Arrott (Plenum, New York 1987) p. 17110.1007/978-1-4684-9145-6_10 ↗
9. E. Bauser, D. Käss, M. Warth, H.-P. Strunk: In Thin Film Interfaces and Phenomena, ed. by R.J. Nemanich, P.S. Lou (Mat. Res. Soc., Pittsburgh 1986) Symp. Proc. Vol. 54, p. 267
10. E. Bauser, M. Frik, K.S. Löchner, L. Schmidt, R. Ulrich: J. Cryst. Growth 27, 148 (1974)10.1016/S0022-0248(74)80059-X ↗