The effect of H-dilution on the transport properties of doped a-Si1?x Ge x : H alloys
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (17)
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15. For boron doping we used diborane that was already prediluted with hydrogen. For a dopant concentration of 0.1%, this results in an unintentional H-dilution of the order of 2%. Our data on phosphorous doping indicate that this small dilution does not yet significantly alter the deposition conditions
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