On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN
Source abstract
Abstract
We present an experimental investigation of the contribution of secondary fluorescence to the iron signal in proton-induced X-ray emission (PIXE) channeling measurements of Fe-doped GaN layers. A method for the analysis of the PIXE angular scans has been developed, which is necessary for the correct quantification of the lattice site occupation of the Fe atoms in the GaN matrix. This approach should be taken into account any time the lattice location of small amounts of substitutional impurities has to be measured by PIXE channeling in analogous experimental conditions.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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References (8)
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