Nonuniform-channel MOS device

This paper presents a novel technology of lateral profile engineering addressing nonuniform-channel MOS devices. For the first time MOS devices with highly nonuniform 2-D doping profiles are achieved by post-processing implantation of channel doping peaks. By reducing the thermal budget to a single anneal/activation step, any unintentional broadening or washout of the doping profiles is avoided. We demonstrate the feasibility of this scheme in terms of trap generation and damage, and the appropriateness of this approach to explore nonuniform-channel MOS devices. As predicted by simulations, the Ion/Ioff ratio of MOS devices is greatly improved by the introduction of peaking channel dopings. These devices are much less prone to hot-carrier degradation due to reduced electric fields, are less affected by drain induced barrier lowering (DIBL) and exhibit improved resistance to punch through, thus being easier to scale into the ultra-deep-submicron regime.