The electrical performance of thinn +-window layers ina-Si: H solar cells
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (18)
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9. F.J. Demond, G. Müller, H. Damjantschitsch, H. Mannsperger, S. Kalbitzer, P.G. Le Comber, W.E. Spear: J. Phys. (Paris)42, 779 (1981)10.1051/jphyscol:19814170 ↗
10. A. Matsuda et al.: Jpn. J. Appl. Phys.19, L305-L308 (1980)10.1143/JJAP.19.L305 ↗
11. M. Simon, G. Winterling, G. Müller: Verhandlungen der DPG (VI)17, 685 (1981), and Proceed. of IV. EC Photovoltaic Solar Energy Conf., Stresa (1982) to be published
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14. P.G. Le Comber, W.E. Spear: InAmorphous Semiconductors, ed. by M.H. Brodsky (Springer, Berlin, Heidelberg, New York 1979) p. 264
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16. Previous data of the RCA group also show thatV Oc at 300 K is fairly independent on 68-01 for 68-02 68-03?5 nm, see D.E. Carlson: Solar Energy Mater.3, 503 (1980)
17. J.C. Knights: J. Non-Cryst. Solids35/36, 159?170 (1980)10.1016/0022-3093(80)90589-X ↗
18. The growth process of p+-films deposited on ITO coated glass has been studied by Y. Kuwano, T. Fukatsu, T. Imai, M. Ohnishi, H. Nishiwaki, S. Truda: Jpn. J. Appl. Phys.20, Suppl. 20?2, 163 (1981)10.7567/JJAPS.20S2.163 ↗