journal article·1988-10

Nondestructive topographic evaluation of ion implanted layers on GaAs substrates by optical absorption

J. Windscheif, W. Wettling, W. Jantz

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices · GaN-based semiconductor devices and materials

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References (8)

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1. See e.g. H. Ryssel: InAdvances in Electronics and Electron Physics, Vol. 58, ed. by G. Mastron (Academic, New York 1982) p. 191
2. W.L. Smith, A. Rosencwaig, D.L. Willenborg: Appl. Phys. Lett.47, 584 (1985)10.1063/1.96079 ↗
3. J. Windscheif, W. Wettling: InProceedings of the Second Conf. ?Defect Recognition and Image Processing in III?V Compounds?, ed. by E. Weber (Elsevier, Amsterdam 1987)
4. P. Dobrilla, J.S. Blakemore: J. Appl. Phys.58, 208 (1985)10.1063/1.335714 ↗
5. G.M. Martin: Appl. Phys. Lett.39, 747 (1981)10.1063/1.92852 ↗
6. J. Windscheif, W. Wettling: Inst. Phys. Conf. Ser.83, 197 (1987)
7. J.C. Dyment, J.C. North, L.A. D'Asaro: J. Appl. Phys.44, 207 (1973)10.1063/1.1661863 ↗
8. W.L. Smith, A. Rosencwaig, D.L. Willenborg, J. Opsal, W.M. Taylor: Solid State Techn.29, 85 (1986)