Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers
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OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Semiconductor materials and devices
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References (7)
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7. A.M. Mazzone: Phys. Status Solidi A95, 149 (1986)10.1002/pssa.2210950118 ↗