Laser annealing of Bi implanted <111> and <100> silicon
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Advanced Semiconductor Detectors and Materials · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. See for example:Laser-Solid Interaction and Laser Processing, ed. by S.D. Ferris, H.J. Leamy, and J.M. Poate (AIP. Conf. No. 50, New York 1979)
2. P. Baeri, S.U. Campisano, G. Foti, E. Rimini: J. Appl. Phys.50, 788 (1979)10.1063/1.326046 ↗
3. G. Foti, E. Rimini, W.F. Tseng, J.W. Mayer: Appl. Phys.15, 365 (1978)10.1007/BF00886154 ↗
4. C.W. White, S.R. Wilson, B.R. Appleton, W.F. Young, Jr.: J. Appl. Phys.51, 738 (1980)10.1063/1.327334 ↗
5. S.T. Picraux, W.L. Brown, W.L. Gibson: Phys. Rev. B6, 1382 (1972)10.1103/PhysRevB.6.1382 ↗
6. S.U.Campisano, E.Rimini, P.Baeri, G.Foti: Appl. Phys. Lett. (L-282) to be published
7. J.W. Mayer, L. Eriksson, J.A. Davies:Ion Implantation in Semiconductors (Academic Press, New York 1970)
8. G. Foti, L. Csepregi, E. Kennedy, J.W. Mayer, P. Pronko, M.D. Rechtin: Philos. Mag. A37, 591 (1978)10.1080/01418617808239193 ↗
9. F.A. Trumbore: Bell System Tech. J.39, 205 (1960)10.1002/j.1538-7305.1960.tb03928.x ↗
10. S.U. Campisano, G. Foti, M. Servidori: Appl. Phys. Lett.36, 279 (1980)10.1063/1.91453 ↗
11. S.U.Campisano, P.Baeri, M.G.Grimaldi, G.Foti, E.Rimini: J. Appl. Phys. (9572-L) to be published
12. H. Kodera, Japan: J. Appl. Phys.2, 212 (1963)10.1143/JJAP.2.212 ↗
13. P.Baeri, J.M.Poate, S.U.Campisano, G.Foti, E.Rimini A.C.Cullis: Appl. Phys. Lett. (to be published)
14. D.Turnbull: “Comments on the Mechanisms of Laser Annealing”, Proc. Workshop “Laser Induced Nucleation in Solids” Mons, Belgium, Oct. 1979 (unpublished)
15. K.A.Jackson, G.H.Gilmer, H.J.Leamy: InLaser and Electron Beam Processing of Matrials, ed. by C.W.White and C.S.Peercy (AIP.) in press
16. S.U.Campisano, G.Foti, P.Baeri, M.G.Grimaldi, E.Rimini: Appl. Phys. Lett. (L-457) submitted
17. M.Bruel, M.Floccari: Internal report LETI-Grenoble
18. A.S. Grove:Physics and Technology of Semiconductor Devices (J. Wiley, New York 1967)