journal article·1989-04

Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices

Jenn-Gwo Hwu, Jin-Bor Chuang, Shyh-Liang Fu

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis

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References (16)

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