Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing
Source abstract
Abstract
Tellurium nanoclusters were synthesized in (100) Si by ion implantation followed by annealing for 60 min with a 0.45 MHz high-frequency electromagnetic field. The results were compared with previous ones for a 30 min treatment. Structural studies were done by cross-sectional high resolution transmission electron microscopy and fast Fourier transformation of the images. The results show that for the 60 min treatment, the dynamics of nanocluster formation change, larger clusters are observed, some of which crystallized and were separated by high-resistive areas of amorphous Si.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Ion-surface interactions and analysis
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