Influence of C on Ge incorporation in the growth of Ge-rich Ge 1−x−y Si x C y alloys on Si (100)

Ge-rich Ge1−x−ySixCy alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition and the growth rate. A possible mechanism for the suppressive effect is proposed. After calculations of atomic configuration, we obtain the relationship between the degree of suppression and the Ge/C atomic ratio. From the calculation results, a saturation tendency of the suppressive effect is expected with increasing Ge concentration in the growth of Ge1−x−ySixCy alloys.