An investigation of distribution parameters for fluorine ion implantation in indium-tin-oxide films
Source abstract
Abstract
Implanted-fluorine profiles in ITO films have been accurately measured using the 19F(p,αγ)16O resonance nuclear reaction at ER=872.1 keV, with width Γ=4.2 keV. A proper deconvolution calculation method was used to extract the true distribution of fluorine from the experimental excitation yield curves. The experimental range distribution parameters, Rp and ΔRp, were compared with those obtained from Monte Carlo simulation codes.
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OpenAlex topics: ZnO doping and properties · Electron and X-Ray Spectroscopy Techniques · Nuclear Physics and Applications
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References (14)
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