Silicon detectors for neutron detection in the presence of high γ-background

Two types of silicon detectors are reported (ion implantation and surface barrier detector) for the detection of neutrons in high gamma-background. The purpose is to find an optimal design of silicon detector combined with the neutron converter, which is efficient enough to neutron flux and with low sensitivity to γ-rays. The experiments show that for fabrication of effective Si detectors for neutrons (using the (n,α) reactions) in the presence of an intensive γ-field one must optimise the resistivity of the Si substrate and the active area of the detector, at which the detector has a maximum efficiency to the charged particles and is relatively insensitive to the γ-rays.