journal article·1991-03

Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition

H.-S. Kim, C. Lee, M. Takai, S. Namba, S.-K. Min

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OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Ion-surface interactions and analysis · Semiconductor Quantum Structures and Devices

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References (21)

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1. See, for example: Heteroepitaxy on Silicon, MRS Symposia Proceedings, ed. by F.C.C. Fan, J.M. Poate (Materials Research Soc., Pittsburgh, PA 1986) Vol. 67
2. T.C. Chong, C.G. Fonstad: Appl. Phys. Lett 51, 221 (1987)10.1063/1.98481 ↗
3. R.J. Matyi, J.W. Lee, H.F. Schaake: J. Electron. Mater. 17, 87 (1988)10.1007/BF02652239 ↗
4. S.M. Vernon, V.E. Haven, S.P. Tobin, R.G. Wolfson: J. Crystal Growth 77, 490 (1986)10.1016/0022-0248(86)90348-9 ↗
5. S.J. Pearton, S.M. Vernon, C.R. Abernathy, K.T. Short, R. Caruso, M. Stavola, T.M. Gibson, V.E. White, D.C. Jacobson: J. Appl. Phys. 62, 862 (1987)10.1063/1.339690 ↗
6. J.P. van der Ziel, R.D. Dupuis, R.A. Logan, C.J. Pinzone: Appl. Phys. Lett. 51, 89 (1987)10.1063/1.98997 ↗
7. H.-S. Kim, Y. Kim, M.-S. Kim, S.-K. Min: J. Korean Phys. Soc. 21, 288 (1988)
8. J.W. Lee: In: Gallium Arsenide and Related Compounds 1986, ed. by W.T. Lindley, Inst. Phys. Conf. Ser. No. 83 (IOP, Bristol 1987) pp. 111?116
9. B.G. Yacobi, S. Zemon, P. Norris, C. Jagannath, P. Sheldon: Appl. Phys. Lett. 51, 2236 (1987)10.1063/1.98951 ↗
10. B.G. Yacobi, C. Tagannath, S. Zemon, P. Sheldon: Appl. Phys. Lett. 52, 555 (1988)10.1063/1.99415 ↗
11. H.-S. Kim, Y. Kim, M.-S. Kim, S.-K. Min: J. Crystal Growth 92, 507 (1988)10.1016/0022-0248(88)90036-X ↗
12. M.S. Kim, S.-K. Min, J.C. Chun: J. Crystal Growth 74, 21 (1988)10.1016/0022-0248(86)90244-7 ↗
13. M. Takai, J. Tsuchimoto, J. Tokuda, N. Nakai, K. Gamo, S. Namba: Appl. Phys. A 45, 305 (1988)10.1007/BF00617936 ↗
14. W. Stolz, F.E.G. Guimataes, K. Ploog: J. Appl. Phys. 63, 492 (1988)10.1063/1.340269 ↗
15. D.S. Wuu, R.H. Horng, M.K. Lee: Appl. Phys. Lett. 54, 2244 (1989)10.1063/1.101137 ↗
16. C.P. Kuo, S.K. Vong, R.M. Cohen, G.B. Stringfellow: J. Appl. Phys. 57, 5428 (1985)10.1063/1.334817 ↗
17. G.E. Pikus, G.L. Bir: Sov. Phys. Solid State 1, 136 (1959)
18. F.H. Pollak, M. Cardona: Phys. Rev. 172, 816 (1968)10.1103/PhysRev.172.816 ↗
19. A. Gavini, M. Cardona: Phys. Rev. B 1, 672 (1970)10.1103/PhysRevB.1.672 ↗
20. F.S. Hickernell, W.R. Gayton: J. Appl. Phys. 37, 462 (1966)10.1063/1.1707886 ↗
21. R. Bendorius, A. Shileika: Solid State Commun. 8, 1111 (1970)10.1016/0038-1098(70)90007-4 ↗