?0.75 eV killer centre? in red-emitting GaP LEDs
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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials
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References (6)
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1. A.R. Peaker, B. Hamilton, D.R. Wight, I.D. Blenkinsop, W. Harding, R. Gibb: Gallium arsenide and Related compounds 1976, Inst. Phys. Conf. Ser. No. 33a, p. 326 (1977)
2. See for example: C.T. Sah, L. Forbes, L.L. Rosier, A.F. Tasch, Jr.: Solid State Electron,13, 759 (1970)10.1016/0038-1101(70)90064-X ↗
3. A. Mircea, D. Bois: Defects and radiation effects in semiconductors 1978, Inst. Phys. Conf. Ser. No. 46 p. 82 (1979)
4. R.M. Gibb, G.J. Rees, B.W. Thomas, B.L.H. Wilson, B. Hamilton, D.R. Wight, N.F. Mott: Philos. Mag.36, 1021 (1977)10.1080/14786437708239776 ↗
5. B. Hamilton, A.R. Peaker, S. Bramwell, W. Harding, D.R. Wight: Appl. Phys. Lett.12, 702 (1975)10.1063/1.88042 ↗
6. See, for example: G.L. Miller, D.V. Lang, L.C. Kimerling: Ann. Rev. Mater. Sci.7, 377 (1977)10.1146/annurev.ms.07.080177.002113 ↗