Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Thin-Film Transistor Technologies · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (7)
Show source-provided references
1. A. Gopinath, J.B. Rankin: IEEE Trans. ED-32, 1272?1278 (1985)10.1109/T-ED.1985.22111 ↗
2. V.K. Singh, S.N. Chattopadhyay, B.B. Pal: Solid-State Electron.29, 707 (1986)10.1016/0038-1101(86)90156-5 ↗
3. T. Takada, K. Yokoyama, M. Ida, T. Sudo: IEEE Trans. MTT-30, 719?723 (1982)
4. V.K. Singh, B.B. Pal: Solid-State Electron. (Special Issue on Optoelectronics)30, 113?118 (1987)10.1016/0038-1101(87)90039-6 ↗
5. G.W. Taylor, H.M. Darley, R.C. Frye, P.K. Chatterjee: IEEE Trans. ED-26, 172?182 (1979)10.1109/T-ED.1979.19401 ↗
6. V.K. Singh, B.B. Pal: Solid State Electron.30, 267?272 (1987)10.1016/0038-1101(87)90182-1 ↗
7. S.M. Sze:Physics of Semiconductor Devices, 2nd ed. (Wiley Eastern, New Delhi 1983) p. 750