Tunneling current-voltage characteristics of Ti-silicide/p? Si/p+ Si Schottky diodes
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OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Intermetallics and Advanced Alloy Properties
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References (26)
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1. W. M�nch:Festk�rperprobleme/Advances in Solid State Physics, Vol. XXVI, ed. by P. Grosse (Vieweg, Braunschweig 1986) p. 67
2. W. Schottky: Naturwissenschaften26, 843 (1938)10.1007/BF01774216 ↗
3. J. Bardeen: Phys. Rev.71, 717 (1947)10.1103/PhysRev.71.717 ↗
4. V. Heine: Phys. Rev.138A, 1689 (1965)10.1103/PhysRev.138.A1689 ↗
5. G.W. Rubloff:Festk�rperprobleme/Advances in Solid State Physics, Vol. XXIII, ed. by P. Grosse (Vieweg, Braunschweig 1983) p. 179
6. E.L. Wolf:Principles of Electron Tunneling Spectroscopy, International Series of Monographs on Physics, Vol. 71 (Oxford Science Publications, Oxford 1985) p. 19ff.
7. J.W. Conley, C.B. Duke, G.D. Mahan, J.J. Tiemann: Phys. Rev.150, 466 (1966)10.1103/PhysRev.150.466 ↗
8. J.W. Conley, G.D. Mahan: Phys. Rev.161, 681 (1967)10.1103/PhysRev.161.681 ↗
9. G.H. Parker, C.A. Mead: Phys. Rev. Lett.21, 605 (1968)10.1103/PhysRevLett.21.605 ↗
10. F.A. Padovani, R. Stratton: Phys. Rev. Lett.16, 1202 (1966)10.1103/PhysRevLett.16.1202 ↗
11. P. R�v�sz, J. Gyimesi, �. Zsoldos: J. Appl. Phys.54, 1860 (1983)10.1063/1.332237 ↗
12. R. Beyers, D. Coulman, P. Merchant: J. Appl. Phys.61, 5110 (1987)10.1063/1.338337 ↗
13. J.A. Stroscio, R.M. Feenstra, A.P. Fein: Phys. Rev. Lett.57, 2579 (1986)10.1103/PhysRevLett.57.2579 ↗
14. N.D. Lang: Phys. Rev. B34, 5947 (1986)10.1103/PhysRevB.34.5947 ↗
15. A. Casel, H. Jorke, E. Kasper, H. Kippel: Appl. Phys. Lett.48, 922 (1987)10.1063/1.96659 ↗
16. M.A. Taubenblatt, C.R. Helms: J. Appl. Phys.53, 6308 (1982)10.1063/1.331551 ↗
17. see also M.A. Taubenblatt, D. Thomson, C.R. Helms: Appl. Phys. Lett.44, 895 (1984)10.1063/1.94926 ↗
18. M.A. Taubenblatt: Technical Report No. G-740-1, Solid State Electronics Laboratory, Stanford, June 1985
19. S.A. Chambers, D.M. Hill, F. Xu, J.H. Weaver: Phys. Rev.35B, 634 (1987)10.1103/PhysRevB.35.634 ↗
20. S.M. Sze:Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981) p. 266
21. J. Wagner: Phys. Rev.29B, 2002 (1984)10.1103/PhysRevB.29.2002 ↗
22. W. Franz:Handbuch der Physik, Vol. XVII, ed. by S. Fl�gge (Springer, Berlin, Heidelberg 1956) p. 155
23. W. Cabanski, M. Schulz, E. Kasper, H.J. Herzog: Appl. Phys. Lett.51, 811 (1987)10.1063/1.98874 ↗
24. J.H. Weaver, A. Franciosi, V.L. Moruzzi: Phys. Rev. B29, 3293 (1984)10.1103/PhysRevB.29.3293 ↗
25. S.P. Murarka, D.B. Fraser: J. Appl. Phys.51, 342 (1980)10.1063/1.327378 ↗
26. D. Levy, J.P. Ponpon, A. Grob, J.J. Grob, R. Stuck: Appl. Phys. A38, 23 (1985)10.1007/BF00618722 ↗