journal article·1999-04-01

Influence of growth conditions on the incorporation of substitutional C in Si 1-x-y Ge x C y alloy on Si by chemical vapor deposition using C 2 H 4

N. Jiang, L. Zang, R.L. Jiang, S.M. Zhu, P. Han, X.B. Liu, X.M. Cheng, R.H. Wang, Y.D. Zheng, X.N. Hu, J.X. Fang

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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Silicon and Solar Cell Technologies

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