Energy levels of paired donor impurities in SixGe1?x alloys
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
Show source-provided references
1. O.F. Sankey, J.D. Dow: Appl. Phys. Lett.38, 685 (1981)10.1063/1.92479 ↗
2. O.F. Sankey, J.D. Dow: J. Appl. Phys.52, 5139 (1981)10.1063/1.329413 ↗
3. O.F. Sankey, H.P. Hjalmarson, J.D. Dow: Phys. Rev. Lett.45, 1656 (1980)10.1103/PhysRevLett.45.1656 ↗
4. O.F. Sankey, J.D. Dow: Phys. Rev. B26, 3243 (1982) and references to experimental work therein10.1103/PhysRevB.26.3243 ↗
5. M. Lannoo, P. Lenglart: J. Phys. Chem. Solids30, 2409 (1969)10.1016/0022-3697(69)90065-1 ↗
6. M. Lannoo, J. Bourgoin:Point Defects in Semiconductors I, Springer Sci. Solid-State Sci.22 (Springer, Berlin, Heidelberg, New York 1981)
7. W.Y Hsu, J.D. Dow, D.J. Wolford, B.G. Streetman: Phys. Rev. B16, 1597 (1977)10.1103/PhysRevB.16.1597 ↗
8. P. Vogl, H.P. Hjalmarson, J.D. Dow: Phys. Chem. Solids44, 353 (1983)10.1016/0022-3697(83)90064-1 ↗
9. H.P. Hjalmarson, P. Vogl, D.J. Wolford, J.D. Dow: Phys. Rev. Lett.44, 810 (1980) and to be published10.1103/PhysRevLett.44.810 ↗
10. C.M. Bhandari, D.M. Rowe: Contemp. Phys.21, 219 (1980)10.1080/00107518008210957 ↗
11. R. Braunstein, A.R. Moore, F. Herman: Phys. Rev.109, 695 (1958)10.1103/PhysRev.109.695 ↗
12. J. Tauc, H. Abraham: J. Phys. Chem. Solids20, 190 (1961)10.1016/0022-3697(61)90004-X ↗
13. J. Klein, F. Pollak, M. Cardona: Helv. Phys. Acta41, 968 (1968)
14. K.E. Newman, J.D. Dow: Bull. Am. Phys. Soc.27, 317 (1982) and unpublished
15. B. Bunker, S. Hulbert, J. Stott, F.C. Brown: Bull. Am. Phys. Soc.28, 412 (1983)
16. The binding energy of the Si2p core exciton is related to the energy level of the P deep trap. See H.P. Hjalmarson, H. Büttner, J.D. Dow: Phys. Rev. B24, 6010 (1981)10.1103/PhysRevB.24.6010 ↗
17. W.A. Harrison:Electronic Structure and the Properties of Solids (Freeman, San Francisco 1980)
18. I.V. Karpova, S.G. Kalashnikov: Intern. Conf. Phys. Semicond., Exeter (1962) p. 880
19. R. Conradt, J. Aengenheister: Solid State Commun.10, 321 (1972)10.1016/0038-1098(72)90016-6 ↗
20. J.D. Beck, R. Conradt: Solid State Commun.13, 93 (1973)10.1016/0038-1098(73)90075-6 ↗
21. A. Haug, W. Schmid: Solid-State Electron.25, 665 (1982) and references therein10.1016/0038-1101(82)90069-7 ↗