journal article·1992-10

Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

Ke-Ming Wang, Bo-Rong Shi, Xiang-Dong Liu, Tian-Bing Xu, Pei-Ran Zhu, Jun-Si Zhu, Qing-Tai Zhao

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. M. Tamura, R. Ando, K. Ohyu: Nucl. Instr. and Meth. B 59/60, 572 (1991)10.1016/0168-583X(91)95282-I ↗
2. M. Tamura, N. Natsuaki, Y. Wada, E. Mitani: Nucl. Instrum. Methods B 21, 438 (1987)10.1016/0168-583X(87)90874-3 ↗
3. A.N. Saxena, D. Pramanik: Materials Science and Engineering B 2, 1 (1989)
4. L.E. Feldman, J.W. Mayer, S.T. Picraux: Materials Analysis by Ion Channeling (Academic, New York 1982)
5. H. Matsumura, S. Furukawa: J. Appl. Phys. 47, 1746 (1976)10.1063/1.322885 ↗
6. D. Fink, J.P. Biersack, H. Kranz, J. de Souza, M. Behar, F.C. Zawislak: Radiat. Eff. 106, 165 (1988)10.1080/00337578808225699 ↗
7. E. B�gh: Can. J. Phys. 46, 653 (1968)10.1139/p68-081 ↗
8. J.P. Biersack, L.G. Haggmark: Nucl. Instrum. Methods 174, 257 (1980)10.1016/0029-554X(80)90440-1 ↗
9. L.C. Feldman, J.W. Rodgers: J. Appl. Phys. 41, 3776 (1970)10.1063/1.1659506 ↗
10. B. Canut, L. Romana, P. Thevenard, N. Moncoffre: Nucl. Instrum. Methods B 46, 128 (1990)10.1016/0168-583X(90)90683-L ↗