journal article·1990-07

Low field DC investigation of hot carrier trapping in silicon dioxide films

I. Strzałkowski, M. Marczewski, M. Kowalski, J. Wisłowski

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Advancements in Semiconductor Devices and Circuit Design

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References (8)

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1. “The Physics of Hot-Carrier Degradation in Si MOSFETs”, Proceedings of a Satellite Workshop in connection with INFOS '89. In “INFOS '89”, Proceedings of the 6th International Conference on Insulating Films on Semiconductors, ed. by F. Koch, A. Spitzer (North-Holland, Amsterdam 1989)
2. D.R. Wolters, A.T.A. Zegers-van Duynhoven: In The Physics and Technology of Amorphous SiO2, ed. by R.A.B. Devine (Plenum, New York 1988) pp. 391–409; see also Ref. [1] pp. 565–57710.1007/978-1-4613-1031-0_52 ↗
3. A. Badihi, B. Eitan, I. Cohen, J. Shappir: Appl. Phys. Lett. 40, 396–398 (1982)10.1063/1.93115 ↗
4. Y. Nissan-Cohen, J. Shappir, D. Frohman-Bentchkowsky: J. Appl. Phys. 54, 5793–5800 (1983)10.1063/1.331805 ↗
5. M. Pepper: J. Phys. D 6, 2124–2130 (1973)
6. D.A. Buchanan, M.V. Fischetti, D.J. DiMaria: In [1] pp. 420–428
7. D.R. Young: In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, ed. by C.R. Helms, B.E. Deal (Plenum, New York 1988) pp. 487–49610.1007/978-1-4899-0774-5_54 ↗
8. C. Svensson: In The Si-SiO2 System, ed. by P. Balk (Elsevier, Amsterdam 1988) Chap. 5, pp. 221–271