journal article·1995-12

Projection-patterned etching of silicon in chlorine atmosphere with a KrF excimer laser

F. Foulon, M. Green

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Laser Material Processing Techniques · Surface Roughness and Optical Measurements · Laser-induced spectroscopy and plasma

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (27)

Show source-provided references
1. D. Bäuerle:Chemical Processing with Lasers, Springer Ser. Mater. Sci., Vol. 1 (Springer, Berlin, Heidelberg 1986)10.1007/978-3-662-02505-5 ↗
2. Y. Horiike, N. Hayasaka, S. Sekine, T. Arikado, M. Nakase, H. Okano, Appl. Phys. A44, 313 (1987)10.1007/BF00624598 ↗
3. I.W. Boyd:Laser Processing of Thin Films and Microstructures, Springer Ser. Mater. Sci., Vol. 3 (Springer, Berlin, Heidelberg, 1987)10.1007/978-3-642-83136-2 ↗
4. K. Eden, H. Beneking, W. Roth: Appl. Surf. Sci.36, 421 (1989)10.1016/0169-4332(89)90938-0 ↗
5. H. Hidaka, K. Akita, M. Taneya, Y. Sugimoto: Electron. Lett.26, 1113 (1990)10.1049/el:19900719 ↗
6. F. Foulon, M. Green: In:Photochemical Processing of Electronic Materials, ed. by I.W. Boyd, R.B. Jackman (Academic London 1991), p. 465
7. R. Kullmer, D. Bäuerle: Appl. Phys. A43, 227 (1987)10.1007/BF00615982 ↗
8. R. Kullmer, D. Bäuerle: Appl. Phys. A47, 377 (1988)10.1007/BF00615502 ↗
9. J. Boulmer, B. Bourguignon, J.P. Budin, D. Débarre: Appl. Surf. Sci.43, 424 (1989)10.1016/0169-4332(89)90250-X ↗
10. J. Boulmer, B. Bourguignon, J.P. Budin, D. Débarre, A. Desmur: J. Vac. Sci. Technol. A9, 2923 (1991)10.1116/1.577152 ↗
11. A. Aliouchouche, J. Boulmer, B. Bourguignon, J.P. Budin, D. Débarre: Appl. Surf. Sc.43, 424 (1989)10.1016/0169-4332(89)90250-X ↗
12. T.S. Baller, J. Dielman: Appl. Surf. Sci.43, 409 (1989)10.1016/0169-4332(89)90248-1 ↗
13. W. Sesselmann: Chemtronics,4, 135 (1989)
14. W. Sesselmann, E. Hudeczek, F. Bachmann: J. Vac. Sci. Technol. B7, 1284 (1989)10.1116/1.584474 ↗
15. J.H. Brannon: Mater. Res. Soc. Symp. Proc.101, 27 (1988)10.1557/PROC-101-27 ↗
16. P. Brewer, D. McClure, R.M. Osgood: Appl. Phys. Lett.49, 803 (1986)10.1063/1.97552 ↗
17. F. Foulon, M. Green, F. Goodall, S. De Unamuno: J. Appl. Phys.71, 2898 (1992)10.1063/1.351021 ↗
18. F. Foulon, M. Green: J. Vac. Sci. Technol. B11, 1854 (1993)10.1116/1.586490 ↗
19. F. Foulon, M. Green: Appl. Phys. A (1995) (submitted)
20. S. De Unamuno, M. Toulemonde, P. Siffert: InLaser Processing and Diagnostics, ed. by D. Bäuerle, Springer Ser. Chem. Phys., Vol. 39 (Springer, Berlin, Heidelberg 1984), p. 3510.1007/978-3-642-82381-7_6 ↗
21. S. Unamuno, E. Fogarassy: Appl. Surf. Sci.36, 1 (1989)10.1016/0169-4332(89)90894-5 ↗
22. F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. de Unamuno, P. Siffert: Appl. Phys. A45, 361 (1988)10.1007/BF00617943 ↗
23. S.M. Sze:Physics of Semiconductor Devices, (Wiley, New York 1981)
24. G.E. Jellison, D.H. Lowndes, D.N. Mashburn, R.F. Wood: Phys. Rev. B34, 2407 (1986)10.1103/PhysRevB.34.2407 ↗
25. H.R. Phillip, H. Ehrenreich: Semicond. Semimet.3, 93 (1967)10.1016/S0080-8784(08)60316-6 ↗
26. B.O. Seraphin, H.E. Bennett: Semicond. Semimet.3, 499 (1967)10.1016/S0080-8784(08)60324-5 ↗
27. J.W. Amos, T.B. Wolfe: IEEE Trans. ED-25, 1160 (1978)10.1109/T-ED.1978.19242 ↗