Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

Debashis Panda; Achintya Dhar; Samit K. Ray

doi:10.1109/tnano.2011.2132142

journal article·2012-01

Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

Debashis Panda, Achintya Dhar, Samit K. Ray

IEEE Transactions on Nanotechnology· Volume 11· Issue 1

Publisher page

Source abstract

Abstract

Nickel nanocrystal (Ni-NC)-embedded titanium dioxide films have been deposited for nonvolatile resistive switching memory devices. The polycrystalline behavior of the films has been observed from the X-ray diffraction spectra. Tiny isolated Ni-NCs with an average size of 4 nm are observed for the 1000 °C, 5-min annealed samples. Stable, bipolar, nonvolatile, and bistable resistive switching states are observed for the optimized annealed Ni-NC-embedded devices with a low SET and RESET voltage of 0.8 and −0.2 V, respectively. A high resistance ratio (>10 $^3$ ), good stability, and retention properties are observed for the nanocrystal sample. The role of thin Ni-NC layer on memory switching stability is discussed.

Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (36)

Show source-provided references

1. 10.1016/0039-6028(82)90248-510.1016/0039-6028(82)90248-5 ↗

2. 10.1007/BF0072948410.1007/BF00729484 ↗

3. 10.1063/1.330162010.1063/1.3301620 ↗

4. 10.1016/0001-6160(84)90198-610.1016/0001-6160(84)90198-6 ↗

5. 10.1063/1.196841610.1063/1.1968416 ↗

6. 10.1143/JJAP.38.209210.1143/JJAP.38.2092 ↗

7. 10.1002/adma.20090037510.1002/adma.200900375 ↗

8. 10.1109/JSSC.2004.83724410.1109/JSSC.2004.837244 ↗

9. 10.1109/TNANO.2005.84693610.1109/TNANO.2005.846936 ↗

10. A Ta$_2$ O$_5$ solid-electrolyte switch with improved reliability

11. 10.1038/nature0319010.1038/nature03190 ↗

12. 10.1109/IEDM.2005.160938310.1109/IEDM.2005.1609383 ↗

13. 10.1063/1.283835010.1063/1.2838350 ↗

14. 10.1063/1.196841610.1063/1.1968416 ↗

15. 10.1038/nnano.2008.16010.1038/nnano.2008.160 ↗

16. 10.1109/TCT.1971.108333710.1109/TCT.1971.1083337 ↗

17. Resistive switching characteristics in Pr$_0.7$ Ca$_0.3$MnO$_3$ thin films on LaNiO$_3$-electrodized Si substrate10.1063/1.3126057 ↗

18. 10.1063/1.319365610.1063/1.3193656 ↗

19. 10.1063/1.11608510.1063/1.116085 ↗

20. 10.1063/1.351403610.1063/1.3514036 ↗

21. 10.1063/1.218162810.1063/1.2181628 ↗

22. 10.1088/0268-1242/24/11/11502010.1088/0268-1242/24/11/115020 ↗

23. 10.1143/JJAP.47.270110.1143/JJAP.47.2701 ↗

24. 10.1149/1.300602410.1149/1.3006024 ↗

25. 10.1109/JSSC.2007.89220710.1109/JSSC.2007.892207 ↗

26. Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20 nm

27. 10.1063/1.319235410.1063/1.3192354 ↗

28. 10.1063/1.157296410.1063/1.1572964 ↗

29. 10.1109/IEDM.2004.141922310.1109/IEDM.2004.1419223 ↗

30. Resistive switching properties and low resistance state relaxation in Al/Pr$_0.7$ Ca$_0.3$MnO$_3$ /Pt junctions

31. 10.1109/TED.2009.201252210.1109/TED.2009.2012522 ↗

32. 10.1016/j.tsf.2007.06.04010.1016/j.tsf.2007.06.040 ↗

33. Resistive switching memory using high-k Ta $_2$O$_5$ films

34. 10.1063/1.276015610.1063/1.2760156 ↗

35. 10.1063/1.221008710.1063/1.2210087 ↗

36. 10.1063/1.335554610.1063/1.3355546 ↗