Pattern transfer and photoluminescence damage assessment of deep-submicrometer features etched by photon-induced cryoetching
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OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies · Laser Material Processing Techniques
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References (42)
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1. T. Arikayo, M. Sekine, H. Okano, Y. Horiike: Mater Res. Soc. Symp. Proc.29, 167 (1984)10.1557/PROC-29-167 ↗
2. P.D Brewer, S. Halle, R.M. Osgood, Jr.: Appl. Phys. Lett.45,475 (1984)10.1063/1.95221 ↗
3. A. Aliouchouche, J. Boulmer, B. Bourguignon, J.-P. Budin, D. Debarre, A. Desmur: Appl. Surf. Sci.69, 52 (1993)10.1016/0169-4332(93)90481-P ↗
4. R. Heydel, R. Matz, W. Göpel: Appl. Surf. Sci.69, 38 (1993)10.1016/0169-4332(93)90479-U ↗
5. F. Foulon, M. Green: Appl. Phys. A60, 377 (1995)10.1007/BF01538337 ↗
6. P.D. Brewer, D. McClure, R.M. Osgood, Jr.: Appl. Phys. Lett.49, 803 (1986)10.1063/1.97552 ↗
7. P.A. Maki, D.J. Ehrlich: Appl. Phys. Lett.55, 91 (1989)10.1063/1.102097 ↗
8. M.N. Ruberto, X. Zhang, R. Scarmozzino, A.E. Willner, D.V. Podlesnik, R.M. Osgood, Jr.: J. Electrochem. Soc.138, 1174 (1991)10.1149/1.2085737 ↗
9. S. Tachi, K. Tsujimoto, S. Okuddaira: Appl. Phys. Lett.52, 616 (1988)10.1063/1.99382 ↗
10. K. Tsujimoto, S. Tachi, K. Ninomiya, K. Suzuki, S. Okudaira, S. Nishimatsu: InExtended Abstracts of the 18th Conf. on Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo 1986) pp. 228–232
11. V. Liberman, G. Haase, R.M. Osgood, Jr.: J. Chem. Phys.96, 1590 (1992)10.1063/1.462143 ↗
12. M.C. Shih, M.B. Freiler, G. Haase, R. Scarmozzino, R.M. Osgood, Jr.: Appl. Phys. Lett.61, 828 (1992)10.1063/1.107758 ↗
13. M.C. Shih, M.B. Freiler, R. Scarmozzino, R.M. Osgood, Jr.: J. Vac. Sci. Technol. B13, 43 (1995)10.1116/1.587983 ↗
14. Recently, experiments in other III-V materials have been obtained as reported in J.-L. Lin, M.B. Freiler, M. Levy, D. Collins, T.C. McGill, R.M. Osgood, Jr.: Appl. Phys. Lett.67, 3583 (1995)
15. P.M. Asbeck, C.P. Lee, M.F. Chang: IEEE Trans. ED-31, 1377 (1984)10.1109/T-ED.1984.21719 ↗
16. J.-Z. Li, I. Adesia, E.D. Wolf: J. Vac. Sci. Technol. B3,406 (1985)10.1116/1.583274 ↗
17. S. Sugata, K. Asakawa: J. Vac. Sci. Technol. B5, 894 (1987)10.1116/1.583686 ↗
18. N. Furuhata, H. Miyamoto, A. Okamoto: J. Electron. Mater.9, 201 (1990)10.1007/BF02651746 ↗
19. F. Foulon, M. Green, F.N. Goodall, S. De Unamuno: J. Appl. Phys.71, 2906 (1992)10.1063/1.351021 ↗
20. A. Scherer, H.G. Craighead, M.L. Roukes, J.P. Harbison: J. Vac. Sci. Technol. B6, 277 (1988)10.1116/1.584023 ↗
21. Y.-L. Chang, I.-H. Tan, Y.H. Zhang, J. Merz, E. Hu, A. Frova, V. Emiliani: Appl. Phys. Lett.62, 2697 (1993)10.1063/1.109235 ↗
22. C.L. French, W.S. Balch, J.S. Ford: J. Phys. Condens Mater3, S351 (1991)10.1088/0953-8984/3/S/054 ↗
23. S. Matsui, H. Wantanabe: Appl. Phys. Lett.59, 2284 (1991)10.1063/1.106044 ↗
24. S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, G.E. Derkits, Jr., A.P. Kinsella: J. Electrochem. Soc.137, 3892 (1990)10.1149/1.2086323 ↗
25. R. Davis, P. Jha: J. Vac. Sci. Technol. B13, 242 (1995)10.1116/1.588358 ↗
26. E. Yoon, R.A. Gottscho, V.M. Donnelly, W.S. Hobson: J. Vac. Sci. Technol. B10, 2197 (1992)10.1116/1.586189 ↗
27. S.D. Offsey, J.M. Woodall, A.C. Warren, P.D. Kirchner, T.I. Chappell, G.D. Petit: Appl. Phys. Lett.48, 475 (1986)10.1063/1.96535 ↗
28. V. Liberman: Light-induced reaction of chlorine and chlorine containing compounds with GaAs (110) surfaces. Ph. D. Thesis, Columbia Univesity (1991)
29. P.D. Wang, C.M. Sotomayor-Torres, H. Benisty, C. Weisbuch, S.P. Beaumont: Appl. Phys. Lett.61, 946 (1992)10.1063/1.107737 ↗
30. M.A. Reed, R.T. Bate, K. Bradshaw, W.M. Duncan, W.R. Frensley, J.W. Lee, H.D. Shih: J. Vac. Sci. Technol. B4, 358 (1986)10.1116/1.583331 ↗
31. E.M. Clausen, Jr., H.G. Craighead, J.M. Worlock, J.P. Harbison, L.M. Schiavone, L. Florez, B. Van der Gaag: Appl. Phys. Lett.55, 1427 (1989)10.1063/1.101614 ↗
32. Ch. Greus, A. Forchel, J. Straka, K. Pieger, M. Emmerling: Appl. Phys. Lett.61, 1199 (1992)10.1063/1.107593 ↗
33. G. Mayer, B.E. Maile, R. Germann, A. Forchel, P. Grambow, H.P. Meier: Appl. Phys. Lett.56, 2016 (1990)10.1063/1.103003 ↗
34. K. Kash, P. Grabbe, R.E. Nahory, A. Scherer, A. Weaver, C. Caneau: Appl. Phys. Lett.53, 2214 (1988)10.1063/1.100285 ↗
35. L. Davis, K.K. Ko, W.-Q. Li, H.C. Sun, Y. Lam, T. Brock, S.W. Pang, B.K. Battacharya, M.J. Rooks: Appl. Phys. Lett.62, 2766 (1993)10.1063/1.109254 ↗
36. T.D. Bestwick, M.D. Dawson, A.H. Kean, G. Duggan: Appl. Phys. Lett.66, 1382 (1995)10.1063/1.113208 ↗
37. M.A. Foad, S. Thorns, C.D.W. Wilkinson: J. Vac. Sci. Technol. B11, 20 (1993)10.1116/1.586720 ↗
38. C.M. Wolf, N. Holonyak, Jr., G.E. Stillman:Physical Properties of Semiconductors (Prentice Hall, Englewood Cliffs, NJ 1989)
39. M.B. Freiler, G.F. McLane, S. Kim, M. Levy, R. Scarmozzino, R.M. Osgood, Jr., I.P. Herman: Appl. Phys. Lett.67,3883 (1995)10.1063/1.115305 ↗
40. J.A. Lebens, C.S. Tsai, K.J. Vahala, T.F. Kuech: Appl. Phys. Lett.56, 2642 (1990)10.1063/1.102862 ↗
41. M.S. Carpenter, M.R. Melloch, M.S. Lundstrom, S.P. Tobin: Appl. Phys. Lett.52, 2157 (1988)10.1063/1.99563 ↗
42. M.C. Shih, M. Hu, M.B. Freiler, M. Levy, R. Scarmozzino, R.M. Osgood, Jr., I.W. Tao, W.I. Wang: Appl. Phys. Lett.66, 2608 (1995)10.1063/1.113099 ↗