Heat blocking gallium arsenide solar cells
Source abstract
Abstract
The solar cell industry is witnessing an era of unprecedented growth and this trend is set to continue for the foreseeable future. Here we describe a heat reflection pigment-coated single-junction gallium arsenide solar cell that is capable of reflecting heat-inducing near-infrared radiation. The cell maintains its performance better than non-coated cells when exposed to infrared-rich radiant flux. In situations where solar cells get heated mainly from incident infrared radiation, these cells exhibit superior performance. The heat reflecting pigment, cell structure, coating process and cell performance have been described.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Thin-Film Transistor Technologies · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
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