Hydrogen-enhanced recrystallization in N+-implanted GaAs

The hydrogen-enhanced recrystallization during thermal annealing in N+-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N+-implanted GaAs wafer. A whole competitive process between H+ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6×1015 to 1.1×1017 cm-2. In H+ dose region of 2.1×1016 to 5.4×1016 cm-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N+-implanted GaAs in the H+ dose range from 4.7×1016 to 8.1×1016 cm-2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N+-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions.