Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures
Source abstract
Abstract
Semi-spherical SiGe/Si nano-structures of a new type are presented. Epitaxial islands of 30–40 nm in base diameter and 11 nm in height and having a density of about 6×1010 cm-2 were produced on (001) Si by molecular beam epitaxial growth of Si/Si0.5Ge0.5 layers with in situ implantation of 1-keV As+ ions. It was found by cross-section transmission electron microscopy that the islands have a complicated inner structure and consist of a micro-twin nucleus and semi-spherical nano-layers of various SiGe compositions. The nature of the surface patterning is interpreted by stress relaxation through implantation-induced defects.
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Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · GaN-based semiconductor devices and materials
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