journal article·1977-08

Lattice location of lead implanted into silicon at room temperature

C. E. Christodoulides, W. A. Grant, J. S. Williams

Applied Physics· Volume 13· Issue 4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (9)

Show source-provided references
1. W. A. Grant, J. S. Williams: Sci. Progr.63, 27 (1976)
2. R. Andrew, W. A. Grant, P. J. Grundy, J. S. Williams, L. T. Chadderton: Nature262, No 5567, 380 (1976)10.1038/262380a0 ↗
3. G. Carter, W. A. Grant:Ion Implantation of Semiconductors (Edward Arnold, London 1976)
4. D. K. Brice: Application of Ion Beams to Materials, Warwick, England (1975) Institute of Physics Conference Series No 28, 334 (1976)
5. L. Eriksson, G. R. Bellavance, J. A. Davies: Rad. Effects1, 71 (1969)10.1080/00337576908234463 ↗
6. J. A. Davies, G. Foti, L. M. Howe, J. B. Mitchell, K. B. Winterbon: Phys. Rev. Lett.34, no 23 (1975)10.1103/PhysRevLett.34.1441 ↗
7. K. B. Winterbon, P. Sigmund, J. P. Sanders: Mat. Fys. Medd. Dan. Vid. Selsk37, 14 (1970)
8. D. A. Marsden, J. L. Whitton: Rad. Effects6, 181 (1970)10.1080/00337577008236295 ↗
9. D. G. Beanland: Nature (to be published)