Lattice location of lead implanted into silicon at room temperature
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (9)
Show source-provided references
1. W. A. Grant, J. S. Williams: Sci. Progr.63, 27 (1976)
2. R. Andrew, W. A. Grant, P. J. Grundy, J. S. Williams, L. T. Chadderton: Nature262, No 5567, 380 (1976)10.1038/262380a0 ↗
3. G. Carter, W. A. Grant:Ion Implantation of Semiconductors (Edward Arnold, London 1976)
4. D. K. Brice: Application of Ion Beams to Materials, Warwick, England (1975) Institute of Physics Conference Series No 28, 334 (1976)
5. L. Eriksson, G. R. Bellavance, J. A. Davies: Rad. Effects1, 71 (1969)10.1080/00337576908234463 ↗
6. J. A. Davies, G. Foti, L. M. Howe, J. B. Mitchell, K. B. Winterbon: Phys. Rev. Lett.34, no 23 (1975)10.1103/PhysRevLett.34.1441 ↗
7. K. B. Winterbon, P. Sigmund, J. P. Sanders: Mat. Fys. Medd. Dan. Vid. Selsk37, 14 (1970)
8. D. A. Marsden, J. L. Whitton: Rad. Effects6, 181 (1970)10.1080/00337577008236295 ↗
9. D. G. Beanland: Nature (to be published)