journal article·1984-09

Comparison of Schottky barrier heights of CoSi2 formed from evaporated or crystalline Si

C. -D. Lien, M. Finetti, M. -A. Nicolet

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Abstract

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Research context

OpenAlex topics: Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis

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References (8)

Show source-provided references
1. M-A. Nicolet, S.S. Lau: InVLSI Electronics: Microstructure Science, Vol. 6, ed. by N.G. Einspruch,Materials and Process Characterization, ed. by N.G. Einspruch and G.B. Larrabee (Academic Press, New York 1983) Chap. 6
2. S.P. Murarka:Silicides for VLSI Applications (Academic Press, New York 1983)
3. K.N. Tu, W.N. Hammer, J.O. Olowolafe: J. Appl. Phys.51, 1663 (1980)10.1063/1.327773 ↗
4. B.-Y. Tsaur, D.J. Silversmith, R.W. Mountain, L.S. Hung, S.S. Lau, T.T. Sheng: J. Appl. Phys.52, 5243 (1981)10.1063/1.329428 ↗
5. C.-D. Lien, M-A. Nicolet, S.S. Lau:Appl.Phys.A34, 249 (1984)10.1007/BF00616581 ↗
6. S.M. Sze:Physics of Semiconductor Devices, 2nd ed. (Wiley, New York 1982)
7. C.-D. Lien, M-A. Nicolet, C.S. Pai, S.S. Lau: In preparation
8. G.J. van Gurp: J. Appl. Phys.46, 4308 (1975)10.1063/1.321452 ↗