Electrical properties of p +/n + In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy
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OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices
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References (11)
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2. P.K. Chiang, M.L. Timmons, G.G. Fountain, J. A. Hutchby: Patterned Ge tunnel junction as cell interconnects for multijunction, monolithic cascade solar cell. Proc. 18th IEEE Photovoltaic Specialist Conf. (1985) p. 562
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4. T.P. Pearsall, R. Bisaro, P. Merenda, G. Laurencin, R. Ansel, J.C. Portal, C. Houlbert, M. Quillec: The characterization of Ga0.47In0.53As grown lattice-matched on Inp substrates. In GaAs and Related Compound, St. Louis (Inst. of Physics, London 1979) p. 94
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8. K. Alavi, R.L. Aggarwal, S.H. Groves: Interband magnetoabsorption of In0.53Ga0.47As. Phys. Rev. B 21, 1311 (1980)10.1103/PhysRevB.21.1311 ↗
9. C.C. Shen, P.T. Chang, K.Y. Choi: Photovoltaic properties of 0.95 eV p/n InGaAsP homojunction solar cells prepared by liquid phase epitaxy. IEEE Trans. ED-37, 464 (1990)10.1109/16.46384 ↗
10. C.C. Shen, K.Y. Choi: High conversion efficiency p ? n + InP homojunction solar cells: IEEE EDL-6, 78 (1985)
11. K.Y. Choi, C.C. Shen: p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy. J. Appl. Phys. 63, 1198 (1988)10.1063/1.339980 ↗