journal article·1979-11

Disorders produced during high-current and high-dose phosphorus ion implantation in silicon

M. Tamura, K. Yagi, N. Natsuaki, M. Miyao, T. Tokuyama

Applied Physics· Volume 20· Issue 3
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Abstract

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Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies · Advancements in Semiconductor Devices and Circuit Design

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References (17)

Show source-provided references
1. J.H.Freeman: Proc. European Conf. Ion Impl., Reading, (Peter peregrinus England 1970), pp. 1–18
2. For example, G.Dearnaley, J.H.Freeman, R.S.Nelson, J.Stephan:Ion Implantation (North-Holland, Amsterdam, and London 1973), pp. 448–492
3. J.H.Freeman:Ion Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975) pp. 555–569)10.1007/978-1-4684-2151-4_70 ↗
4. M.Tamura, K.Yagi, N.Sakudo, K.Tokiguchi, T.Tokuyama: Proc. of the 9th Conf. on Solid State Devices (Japan Society of Applied Physics, Tokyo 1977) pp. 193–200
5. P.D.Parry: J. Vac. Sci. Technol.15, 111–115 (1978)10.1116/1.569416 ↗
6. D.G.Beanland, D.J.Chivers: J. Vac. Sci. Technol.15, 1536–1540 (1978)10.1116/1.569783 ↗
7. H.Müller, W.K.Chu, J.Gyulai, J.W.Mayer, T.W.Sigmon, T.R.Cass: Appl. Phys. Lett.26, 292–294 (1975)10.1063/1.88161 ↗
8. L.Csepregi, J.W.Mayer, T.W.Sigmon: Phys. Lett.54A, 157–158 (1975)10.1016/0375-9601(75)90847-6 ↗
9. E.T.Yen, B.J.Masters, R.Kastl:Ion Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975) pp. 501–50910.1007/978-1-4684-2151-4_63 ↗
10. M.Miyao, T.Miyazaki, T.Tokuyama: Jpn. J. Appl. Phys.17, 955–956 (1978)10.1143/JJAP.17.955 ↗
11. L.Csepregi, E.F.Kennedy, S.S.Lau, J.W.Mayer: Appl. Phys. Lett.29, 645–648 (1976)10.1063/1.88886 ↗
12. F.L.Vook:Radiation Damage and Defects in Semiconductors (The Institute of Physics, London and Bristol 1972), pp. 60–71
13. F.F.Morehead, B.L.Crowder: Radiat. Eff.6, 27–32 (1970)10.1080/00337577008235042 ↗
14. L.Csepregi, E.F.Kennedy, T.J.Gallagher, J.W.Mayer, T.W.Sigmon: J. Appl. Phys.48, 4234–4240 (1977)10.1063/1.323408 ↗
15. T.Tsuchimoto, T.Tokuyama: Radiat Eff.6, 121–127 (1970)10.1080/00337577008235054 ↗
16. M.Tamura: Appl. Phys. Lett.23, 651–653 (1973)10.1063/1.1654779 ↗
17. M.F.Ashby, M.I.Brown: Phil. Mag.8, 1083–1103 (1963)10.1080/14786436308207338 ↗