Dopant activation in Sb-implanted relaxed Si1?xGex alloy layers grown on compositionally graded buffers
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OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence
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References (30)
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1. F.K. LeGoues, B.S. Meyerson, J.F. Morar, P.D. Kirchner: J. Appl. Phys.71, 4230 (1992)10.1063/1.350803 ↗
2. E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J. Silverman, J.M. Kuo, A.R. Kortan, F.A. Thiel, B.E. Weir: J. Vac. Sci. Technol. B10, 1807 (1992)10.1116/1.586204 ↗
3. F.K. LeGoues, B.S. Meyerson, J.F. Morar: Phys. Rev. Lett.66, 2903 (1991)10.1103/PhysRevLett.66.2903 ↗
4. E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, B.E. Weir: Appl. Phys. Lett.59, 811 (1991)10.1063/1.105351 ↗
5. Y.-H. Xie, E.A. Fitzgerald, D. Monroe, G.P. Watson, P. Silverman: Jpn. J. Appl. Phys.33, 2372 (1994)10.1143/JJAP.33.2372 ↗
6. J.S. Williams, K.T. Short: J. Appl. Phys.53, 8663 (1982)10.1063/1.330463 ↗
7. J. Narayan, O.W. Holland, B.R. Appleton: J. Vac. Sci. Technol. B1, 871 (1983)10.1116/1.582708 ↗
8. A. Nylandsted Larsen, F.T. Pedersen, G. Weyer, R. Galloni, R. Rizzoli, A. Armigliato: J. Appl. Phys.59, 1908 (1986)10.1063/1.336419 ↗
9. Z. Atzmon, M. Eizenberg, P. Revesz, J.W. Mayer, S.Q. Hong, F. Schaffler: Appl. Phys. Lett.60, 2243 (1992)10.1063/1.107043 ↗
10. Z. Atzmon, M. Eizenberg, Y. Shacham-Diamand, J.M. Mayer, F. Schaffler: Appl. Phys. Lett.61, 2902 (1992)10.1063/1.108043 ↗
11. S.Q. Hong, Q.Z. Hong, J. Mayer: J. Appl. Phys.72, 3821 (1992)10.1063/1.352282 ↗
12. S.Q. Hong, Q.Z. Hong, J. Mayer: Appl. Phys. Lett.63, 2053 (1953)10.1063/1.110589 ↗
13. Z. Atzmon, M. Eizenberg, E. Zolotoyabko, S.Q. Hong, J.W. Mayer, F. Schaffler: Nucl. Instrum. Methods B80/81, 751 (1993)10.1016/0168-583X(93)90674-U ↗
14. Z. Atzmon, M. Eizenberg, Y. Shacham-Diamand, J.M. Mayer, F. Schaffler: J. Appl. Phys.75, 377 (1994)10.1063/1.356991 ↗
15. S.U. Shiryaev, M. Fyhn, A. Nylandsted Larsen: Appl. Phys. Lett.63, 3476 (1993)10.1063/1.110125 ↗
16. P. Kringhøj, R.G. Elliman: Phys. Rev. Lett.73, 858 (1994)10.1103/PhysRevLett.73.858 ↗
17. R.G. Elliman, W.C. Wong, P. Kringhøj: Mater. Res. Symp. Proc.321, 461 (1994)
18. T.W. Fan, A. Nejim, J.P. Zhang, Z.G. Wang, P.L.F. Hemment, D. Chescoe: Appl. Phys. Lett.66, 1117 (1995)10.1063/1.113831 ↗
19. M. Fyhn, S.Y. Shiryaev, A. Nylandsted Larsen, J. Lundsgaard Hansen: MRS Fall Meeting (1995) (submitted)
20. A. Nylandsted Larsen, J.L. Lundsgaard Hansen, R.S. Jensen, S.Y. Shiryaev, P.R. Østergaard, J. Hartnung, G. Davies, F. Jensen, J.W. Petersen: Phys. Scr. T54, 208 (1994)10.1088/0031-8949/1994/T54/052 ↗
21. J. Hartung, G. Davies, A. Nylandsted Larsen: Unpublished result (1994)
22. S.Y. Shiryaev, A. Nylandsted Larsen: Private communication
23. D. Nobili, R. Angelucci, A. Armigliato, E. Landi, S. Solmi: J. Electrochem. Soc.136, 1142 (1989)10.1149/1.2096808 ↗
24. F.A. Trombore, W.G. Spitzer, R.A. Logan, C.L. Luke: J. Electrochem. Soc.109, 734 (1962)10.1149/1.2425541 ↗
25. J.S. Williams: InSurface Modification and Alloying by Laser, Ion and Electron Beams (Plenum, New York 1983) Chap. 5
26. J.S. Williams, K.T. Short: Mater. Res. Symp. Proc.7, 109 (1982)10.1557/PROC-7-109 ↗
27. L. Pauling: InThe Nature of the Chemical Bond (Cornell Univ. Press, Ithaca, NY 1948) p. 179
28. S.U. Campisano, E. Rimini, P. Baeri, G. Foti: Appl. Phys. Lett.37, 170 (1980)10.1063/1.91812 ↗
29. S.M. Sze: InPhysics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981) p. 69
30. R.W. Balluffi, A.V. Granato: InDislocations in Solids, ed. by F.R.N. Nabarro (North-Holland, New York 1979)