journal article·1989-09

Photoexcitation of electron-hole pairs during SIMS

J. Kempf, M. Nonnenmacher, H. H. Wagner

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Abstract

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Thin-Film Transistor Technologies

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References (16)

Show source-provided references
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6. J. Kempf: IBM Technical Report, TR 28.111, June 1 (1979)
7. Y. Homma, Y. Ishii: J. Vac. Sci. Technol. A3, 351 (1985)10.1116/1.573219 ↗
8. M. Maier, D. Bimberg, H. Baumgart, F. Phillips:SIMS. Springer Ser. Chem. Phys. Vol.19 (Springer, Berlin, Heidelberg 1981)
9. S.M. Sze:Physics of Semiconductor Devices (Wiley, New York 1981)
10. J.I. Pankove:Optical Processes in Semiconductors in Electrical Engineering Series (Prentice Hall, New Jersey 1971)
11. U.R. Behrisch (ed.):Sputtering by Particle Bombardment, Topics Appl. Phys.42 and52 (Springer, Berlin, Heidelberg 1981 and 1983)
12. F.F.Y. Wang:Impurity Doping Process in Silicon, Materials Processing Theory and Practices, Vol. 2 (North-Holland, Amsterdam 1981)
13. H.W. Werner:Thin Film and Depth Profile Analysis, Topics Curr, Phys.375 (Springer, Berlin, Heidelberg 1984)
14. J.F. Ready:Industrial Application of Lasers (Academic, New York 1978)
15. D. Baeuerle (ed.):Laser Processing and Diagnostics (Springer, Berlin, Heidelberg 1984)
16. J. Kempf: Appl. Phys. A45, 77 (1988)10.1007/BF00618767 ↗