Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy
Source abstract
Abstract
InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices
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