journal article·1984-10

The effects of arsenic source contamination on doped GaAs grown by MBE

R. A. A. Kubiak, E. H. C. Parker

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Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Electron and X-Ray Spectroscopy Techniques

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References (13)

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4. E.H.C. Parker, R.A.A. Kubiak, R.M. King, J.D. Grange: J. Phys. D14, 1853 (1981)
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7. R.A.A. Kubiak: PhD. Thesis, CNAA (1983)
8. G.J. Davies, D.A. Andrews: Vacuum34, 543 (1984)10.1016/0042-207X(84)90374-9 ↗
9. R.A.A. Kubiak, P. Driscoll, E.H.C. Parker: J. Vac. Sci. Technol.20, 252 (1982)10.1116/1.571278 ↗
10. D.L. Rode: InSemiconductors and Semimetals 10, Chap. 1 (Academic Press, New York 1975)
11. S.M. Sze:The Physics of Semiconductor Devices (Wiley, New York 1969)
12. C.E.C. Wood: InThe Technology and Physics of MBE, ed. by E.H.C. Parker (Plenum Press, New York 1984) Chap. 4
13. H. Poth, H. Bruch, M. Heyen, P. Balk: J. Appl. Phys.49, 285 (1978)10.1063/1.324381 ↗