Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications
Source abstract
Abstract
Brain inspired devices are the building block of the neuromorphic based artificial intelligence systems. This paper presents a novel optical memory devices based on the nanostructured V 2 O 5 /MoO 3 . These optical memory devices were fabricated using wafer scalable technology. The fabricated optical memory devices can mimic the synaptic behaviors such as paired pulse facilitation (PPF) index, excitatory postsynaptic current (EPSC), short term plasticity, inhibitory postsynaptic current (IPSC), spike dependent plasticity, long term plasticity and long term retention capability. The proposed devices are shown a PPF index of 216% and long term retention time of 5.6×103 seconds. The demonstrated optical memory devices have highly sensitive, repeatable and have a potential to be used for neuromorphic computing applications.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Indian Institute of Information Technology (IIIT) Sri City, Chittoor, India
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