On the insulating properties of the interfacial layer between ion bombarded-amorphous and crystalline silicon
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Ion-surface interactions and analysis · Silicon and Solar Cell Technologies
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References (5)
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1. G.Müller, S.Kalbitzer: In Proc. 4th Int. Conf. on The Physics of Non-Crystalline Solids, Clausthal-Zellerfeld (1976) p. 278
2. J.J. Hauser, L.C. Kimerling: Phys. Rev. B11, 4043 (1975)10.1103/PhysRevB.11.4043 ↗
3. R. Prisslinger, S. Kalbitzer, H. Kräutle, J.J. Grob, P. Siffert: InIon Implantation in Semiconductors, ed. by S. Namba (Plenum Press, New York and London 1975) p. 54710.1007/978-1-4684-2151-4_69 ↗
4. J.W. Mayer, L. Eriksson, S.T. Picraux, J.A. Davies: Can. J. Phys.46, 663 (1968)10.1139/p68-082 ↗
5. W.S.Johnson, J.F.Gibbons: Projected Range Statistics in Semiconductors; dist. by Stanford University Bookstore (1969)