A copper- and boron-related defect in silicon
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OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces
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References (22)
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1. H. Prigge, P. Gerlach, P.O. Hahn, A. Schnegg: Ext. Abstracts 89-1, The Electrochemical Society, Inc., Pennington, NJ (1989) p. 372
2. U. Reisloehner, S. Deubler, P. Dohlus, D. Forkel, J. Meier, H. Wolf, W. Witthuhn: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner (North-Holland, Amsterdam 1989)
3. R. Keller, M. Deicher, W. Pfeiffer, H. Skudlik, D. Steiner, Th. Wichert: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner (North-Holland, Amsterdam 1989)
4. R. Keller, M. Deicher, W. Pfeiffer, H. Skudlik, D. Steiner, Th. Wichert: Proc. of The Int. Conf. on the Science and Technology of Defect Control in Semiconductors, Yokohama, Sept. (1989)10.1557/PROC-163-245 ↗
5. Th. Prescha, T. Zundel, J. Weber, H. Prigge, P. Gerlach: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner (North-Holland, Amsterdam 1989)
6. T. Zundel, J. Weber: Phys. Rev. B 39, 13459 (1989)
7. G.W. Ludwig, H.H. Woodbury: In Solid State Physics, ed. by F. Seitz, D. Turnbull, Vol. 13 (Academic, New York 1962) p. 223
8. K. Graff, H. Pieper: In Semiconductor Silicon 1981, ed. by H.R. Huff, R.J. Kriegler, Y. Takeishi, Vol. 81-5. The Electrochemical Society Inc., Pennington NJ, 1981, p. 331
9. K. Wuenstel, K.-H. Froehner, P. Wagner: Physica 116B, 301 (1983)
10. H. Feichtinger: Acta Phys. Austriaca 51, 161 (1979)
11. R.C. Newman: Infra-Red Studies of Crystal Defects (Taylor & Francis, London 1973)
12. A.K. Tipping, R.C. Newman: Semicond. Sci. Technol. 2, 389 (1987)10.1088/0268-1242/2/7/001 ↗
13. M. Balkanski, W. Nazarewicz: J. Phys. Chem. Solids 25, 437 (1963)10.1016/0022-3697(64)90010-1 ↗
14. R.J. Elliott, P. Pfeuty: J. Phys. Chem. Solids 28, 1789 (1967)10.1016/0022-3697(67)90154-0 ↗
15. V. Tsvetsov, W. Allred, W.G. Spitzer: In Localized Excitations in Solids, ed. by R.F. Wallis (Plenum, New York 1968) p. 18510.1007/978-1-4899-6445-8_20 ↗
16. C.E. Jones, D. Schafer, W. Scott, R.J. Hager: J. Appl. Phys. 52, 5148 (1981)10.1063/1.329415 ↗
17. A.K. Ramdas, S. Rodriguez: Rep. Progr. Phys. 44, 1297 (1981)10.1088/0034-4885/44/12/002 ↗
18. R.C. Newman, R.S. Smith: In Localized Excitations in Solids (Plenum, New York 1968) p. 17710.1007/978-1-4899-6445-8_19 ↗
19. T. Zundel, J. Weber, B. Benson, P.O. Hahn, A. Schnegg, H. Prigge: Appl. Phys. Lett. 53, 1426 (1988)10.1063/1.99962 ↗
20. J. Reichel, S. Sevcik: Phys. Status Solidi A 103, 413 (1987)10.1002/pssa.2211030210 ↗
21. E.R. Weber: Appl. Phys. A 30, 1 (1983)10.1007/BF00617708 ↗
22. U. Goesele, T.Y. Tan: In Impurity Diffusion and Gettering in Silicon, ed. by R.B. Fair, Ch.W. Pearce, J. Washburn, Material Research Society Symposia Proceedings, Vol. 36, Materials Research Society, Pittsburgh, Pa, 1985, p. 105