journal article·1980-08

Pulsed electron-beam annealing of high-dose arsenic implanted silicon

A. Turos, J. Geerk

Applied Physics· Volume 22· Issue 4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Ion-surface interactions and analysis · Silicon Nanostructures and Photoluminescence

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References (6)

Show source-provided references
1. E.Rimini (ed.): Proc. Laser Effects in Ion Implanted Semiconductors, Catania (August 1978)10.1063/1.31668 ↗
2. J.Gyulai, T.Lohner, E.Pasztor (eds.):Proc. Ion Beam Modification of Materials, Budapest (September 1978)
3. J.Geerk, F.Ratzel: KfK-Report 2912 (in press)
4. J.F.Ziegler, W.K.Chu: At. Data Nucl. Data Tables13 463 (1974)10.1016/0092-640X(74)90009-6 ↗
5. W.K.Chu, J.W.Mayer, M.A.Nicolet:Backscattering Spectrometry (Academic Press, New York 1978)
6. A.Lietola, J.F.Gibbons, T.J.Magee, J.Peng, J.D.Hong: Appl. Phys. Lett.35, 532, (1979)10.1063/1.91198 ↗