Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications
Source abstract
Abstract
This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunction with the tunneling model of trapped charges. Nitrided oxide is widely used to improve the reliability of nanoscale MOSFETs because it can decrease the degradation of gate oxide due to the generation of traps therein. Based on the measurement, the optimum nitrogen concentration in such typical nitrided process is discussed in correlation with the gate oxide thickness for nanoscale CMOSFETs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. 10.1109/16.29334910.1109/16.293349 ↗
2. 10.1109/16.50212710.1109/16.502127 ↗
3. 10.1109/55.93068010.1109/55.930680 ↗
4. 10.1109/23.27749510.1109/23.277495 ↗
5. trap-assisted tunneling current through ultra-thin oxide
6. 10.1109/23.34051610.1109/23.340516 ↗
7. 10.1109/TED.2003.81139510.1109/TED.2003.811395 ↗
8. 10.1109/55.19286610.1109/55.192866 ↗
9. 10.1109/16.14468110.1109/16.144681 ↗
10. 10.1103/PhysRevLett.80.240910.1103/PhysRevLett.80.2409 ↗
11. 10.1109/55.92483510.1109/55.924835 ↗