Suitability of the FinFET 3T1D Cell Beyond 10 nm

The performance of the 3T1D-DRAM cell beyond 10-nm technology node is investigated when the memory cell is based on nonplanar multigate devices, i.e., FinFETs. Moreover, for completeness, the cell is analyzed in both SOI and bulk-based FinFETs. While relevant process variation robustness is observed in SOI-based FinFETs, 10× lower impact than for bulk-based ones. In order to improve the variability robustness of bulk-based FinFET cell, we propose a dual-V _T strategy to enhance the dynamic cell behavior.