journal article·1974-04

Damage dependent electrical activation of boron implanted silicon

H. Ryssel, H. Müller, K. Schmid

Applied Physics· Volume 3· Issue 4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence

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References (11)

Show source-provided references
1. J.W. Mayer, I. Eriksson, J.D. Davies:Ion Implantation in Semiconductors (Academic Press, New York 1970)
2. I. Ruge, H. Müller, H. Ryssel:Problems in Advanced Physics XII (Pergamon Press New York 1972) p. 23
3. N. Blamires:European Conference on Ion Implantation (Peter Peregrinus Ltd, Stevenage, 1970) p. 52
4. D.K. Brice:Ion Implantation, ed. by F.H. Eisen and C.T. Chadderton (Gordon Breach, London, 1971) p. 101
5. H.J. Stein, F.L. Vook, J.A. Borders: Appl. Phys. Letters16, 106 (1970)10.1063/1.1653113 ↗
6. H. Müller: Dr. dissertation, München 1973
7. H. Ryssel, H. Müller, K. Schmid: J. Phys. E (Sci. Instr.)6, 492 (1973)10.1088/0022-3735/6/5/025 ↗
8. H. Ryssel, H. Müller, K. Schmid, I. Ruge:Ion Implantation in Semiconductors and other Materials, ed. by B.L. Crowder (Plenum Publ. Corp. New York 1973) p. 21510.1007/978-1-4684-2064-7_19 ↗
9. G.L. Vick, K.M. Whitte: J. Electrochem. Soc.116, 1142 (1969)10.1149/1.2412239 ↗
10. J.F. Gibbons: Appl. Phys. Letters23, 49 (1973)10.1063/1.1654734 ↗
11. J. Lindhard, M. Scharff, H.E. Schiøtt: Kgl. Danske Videnskab. Selskab., Mat.-Fys. Medd.33, No. 14 (1963)