The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. II. Silicon and oxygen bonding states

The early oxidation stages of hydrogen-terminated single-crystalline (100) silicon have been studied by X-ray photoemission spectroscopy, following the evolution of the Si 2p and O 1s signals after exposure to N2:N2O ambient at 850 °C for different durations. Evidence is given that the usual analysis of the film in terms of the Si 2p peak leads to inconsistencies, related to the presence in the film of non-siloxanic bridges, as oxygen-rich defects (like hydroxyl terminations or peroxo bridges) or oxygen-deficient defects (like amino bridges). Information on the film structure is obtained by combining the analysis of the Si 2p peak with that of the O 1s peak.