journal article·1987-11

Damage created by high-current-density implants of phosphorus into ?100? and ?111? silicon wafers

M. Servidori, S. Cannav�, G. Ferla, A. Ferla, E. Rimini

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (17)

Show source-provided references
1. D.G. Beanland: InIon Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Academic, New York 1984) Chap. 8, p. 26110.1016/B978-0-12-756980-2.50012-6 ↗
2. M. Berti, A.V. Drigo, G. Lulli, P.O. Merli, M. Vittorio Antisari: Phys. Stat. Sol. (A)94, 95 (1986)10.1002/pssa.2210940110 ↗
3. A.V. Dvurechensky, N.N. Gerasimenko, S.I. Romanov, L. Smirnov: Radiat. Eff.30, 69 (1979)10.1080/00337577608233520 ↗
4. J.S. Williams, R.G. Elliman, W.L. Brown, T.E. Seidel: Phys. Rev. Lett.55, 1482 (1985)10.1103/PhysRevLett.55.1482 ↗
5. R.G. Elliman, J.S. Williams, W.L. Brown, A. Leibrich, D.M. Maher, R.V. Knoell: Nucl. Instrum. Methods Phys. Res. B19/20, 470 (1987)
6. S. Cannavó, A. La Ferla, E. Rimini, G. Ferla, L. Gandolfi: J. Appl. Phys.59, 4038 (1986)10.1063/1.337038 ↗
7. L. Csepregi, E.F. Kennedy, J.W. Mayer, T.W. Sigmon: J. Appl. Phys.49, 3906 (1978)10.1063/1.325397 ↗
8. A. La Ferla, S. Cannavó, G. Ferla, S.U. Campisano, E. Rimini, M. Servidori: Nucl. Instrum. Methods Phys. Rev. B19/20, 470 (1987)10.1016/S0168-583X(87)80093-9 ↗
9. S. Cannavó, A. La Ferla, S.U. Campisano, E. Rimini, G. Ferla, L. Gandolfi, J. Liu, M. Servidori: Mater. Res. Symp. Proc.51, 329 (1986)10.1557/PROC-51-329 ↗
10. P.D. Parry: J. Vac. Sci. Technol.13, 622 (1976)10.1116/1.569046 ↗
11. S. Cannavó, M.G. Grimaldi, E. Rimini, G. Ferla, L. Gandolfi: Appl. Phys. Lett.47, 138 (1985)10.1063/1.96240 ↗
12. S. Mader: Ion implantation damage in silicon, inIon Implantation Science and Technology, ed. by J.F. Ziegler (Academic, New York 1984) p. 109
13. T.Y. Tan, H. Föil, S.M. Hu: Philos. Mag. A44, 127 (1981)10.1080/01418618108244498 ↗
14. V.G. Eremenko, V.I. Nikitenko: Phys. Stat. Sol. (a)14, 313 (1972)
15. R.G. Elliman, J.S. Williams, D.M. Maher, W.L. Brown: Mat. Res. Soc. Symp. Proc.51, 319 (1986)10.1557/PROC-51-319 ↗
16. J. Narayan: J. Appl. Phys.53, 8607 (1982)10.1063/1.330457 ↗
17. M. Servidori, S. Cannavó, G. Ferla, A. La Ferla, S.U. Campisano, E. Rimini: Nucl. Instrum. Methods Phys. Res. B19/20, 317 (1987)10.1016/S0168-583X(87)80064-2 ↗