journal article·1987-01

Optical properties and origin of infrared light scattering centers in undoped semi-insulating GaAs crystals

T. Katsumata, H. Okada, T. Kikuta, T. Fukuda

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OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Thin-Film Transistor Technologies

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14. It has been shown that the midgap level observed by DLTS and optical absorption are different [16]. Here, we are concerned with the optically detected midgap level, which we call EL2 as was done previously
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