journal article·1988-03

Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser

K. Sugioka, K. Toyoda

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Abstract

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Silicon Nanostructures and Photoluminescence · Diamond and Carbon-based Materials Research

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References (10)

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