journal article·1985-10

Contribution to time-resolved enhanced chemical etching and simultaneous annealing of ion implantation amorphized silicon under intense laser irradiation

E. F. Krimmel, A. G. K. Lutsch, R. Swanepoel, J. Brink

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Laser Material Processing Techniques · Advanced Surface Polishing Techniques · Thin-Film Transistor Technologies

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References (8)

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1. D.J. Ehrlich, J.Y. Tsao: J. Vac. Sci. Technol. B1, 969 (1983)10.1116/1.582718 ↗
2. D. Bäuerle (ed.):Laser Processing and Diagnostics, Springer Ser. Chem. Phys.39 (Springer, Berlin, Heidelberg 1984)
3. R.J. v. Gutfeld, R.T. Hodgson: Appl. Phys. Lett.40, 352 (1982)10.1063/1.93069 ↗
4. E.F. Krimmel, A. Meyer, R. Weyl: Private communication (1984)
5. E.F. Krimmel: Z. Physik163, 339 (1961)10.1007/BF01342492 ↗
6. G. Dearnaley, J.H. Freeman, R.S. Nelson, J. Stephen:Ion Implantation (North-Holland, Amsterdam 1973)
7. E.F. Krimmel, H. Oppolzer, H. Runge, W. Wondrak: Phys. Stat. Solidi (a)66, 565 (1981)10.1002/pssa.2210660219 ↗
8. H.S. Carslaw, J.C. Jaeger:Conduction of Heat in Solids (Clarendon, Oxford 1984)