journal article·1974-08

Determination of cesium distributions in oxides of MOS structures by photoinjection studies

G. Sixt, M. Schulz, A. Goetzberger

Applied Physics· Volume 4· Issue 3
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Abstract

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Research context

OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Ion-surface interactions and analysis

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References (16)

Show source-provided references
1. E.H.Snow, A.S.Grove, B.E.Deal, C.T.Sah: J. Appl. Phys.36, 1664 (1965)10.1063/1.1703105 ↗
2. S.R.Hofstein: IEEE Trans. Electron Devices ED-13, 222 (1966)10.1109/T-ED.1966.15674 ↗
3. G.Sixt, A.Goetzberger: Appl. Phys. Letters19, 478 (1971)10.1063/1.1653780 ↗
4. SatishKumar, L.V.Gregor: J. Electrochem. Soc.120, 1285 (1973)10.1149/1.2403681 ↗
5. T.M.Buck, F.G.Allen, J.V.Dalton, J.D.Struthers: J. Electrochem. Soc.114, 862 (1967)10.1149/1.2426755 ↗
6. A.Benninghoven: Appl. Phys.1, 3 (1973)10.1007/BF00886799 ↗
7. C.N.Berglund, R.J.Powell: J. Appl. Phys.42, 573 (1971)10.1063/1.1660066 ↗
8. R.J.Powell, C.N.Berglund: J. Appl. Phys.42, 4390 (1971)10.1063/1.1659784 ↗
9. A.Axmann: Appl. Phys. Letters23, 645 (1973)10.1063/1.1654778 ↗
10. R.Williams: Phys. Rev.140, A 569 (1965)10.1103/PhysRev.140.A569 ↗
11. R.J.Powell: J. Appl. Phys.41, 2424 (1970)10.1063/1.1659238 ↗
12. E.J.Gillham, J.S.Preston, B.E.Williams: Phil. Mag.46, 1051 (1955)10.1080/14786441008521119 ↗
13. J.Lindhard, M.Scharff, H.E.Schiott: K. Dan. Vidensk Selsk., Mat.-Fys. Medd.33, No. 14 (1964)
14. E.H.Nicollian, C.N.Berglund, P.F.Schmidt, J.M.Andrews: J. Appl. Phys.42, 5654 (1971)10.1063/1.1659996 ↗
15. R.Williams, M.H.Woods: Appl. Phys. Letters22, 458 (1973)10.1063/1.1654711 ↗
16. G.Sixt, A.Hurrle: to be published