journal article·1988-01

Amorphous silicon logic integrated circuits

M. B�hm, S. Salamon, Z. Kiss

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence

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References (17)

Show source-provided references
1. W.E. Spear, P.G. LeComber: J. Non-Cryst. Solids8?10, 727 (1972)10.1016/0022-3093(72)90220-7 ↗
2. A. Madan, P.G. LeComber, W.E. Spear: J. Non-Cryst. Solids20, 239 (1976)10.1016/0022-3093(76)90134-4 ↗
3. P.G. LeComber, W.E. Spear, A. Gaith: Electron. Lett.15, 179 (1979)10.1049/el:19790126 ↗
4. T.P. Brody, J.A. Asars, G. Douglas Dixon: IEEE Trans. ED-20, 995 (1973)10.1109/T-ED.1973.17780 ↗
5. A.J. Snell, K.D. Mackenzie, W.E. Spear, P.G. LeComber, A.J. Hughes: Appl. Phys.24, 357 (1981)10.1007/BF00899734 ↗
6. D.G. Ast:A-Si:H FET-addressed LCD panel, inSemiconductors & Semimetals, Vol.21, Pt. D, ed. by J.I. Pankove (Academic, Orlando 1984) p. 115
7. M.J. Thompson:The Materials Issues and Applications of Amorphous Silicon Thin Film Transistors, inMaterials Issues in Amorphous Semiconductor Technology, ed. by D. Adler, Y. Hamakawa, A. Madan. MRS Proc.70, 613 (1986)10.1557/PROC-70-613 ↗
8. S. Kaneko:Solid-State Image Sensor, inSemiconductors & Semimetals, Vol.21, Pt. D, ed. by J.I. Pankove (Academic, Orlando 1984) p. 139
9. A.J. Snell, A. Doghmane, P.G. LeComber, W.E. Spear: Appl. Phys. A34, 175 (1984)10.1007/BF00616914 ↗
10. P.G. LeComber, W.E. Spear:Development of the a-Si:H Field-Effect Transistor and Its Possible Applications, in Semiconductors & Semimetals, Vol.21, Pt. D, ed. by J.I. Pankove (Academic, Orlando 1984) p. 89
11. M.J. Thompson: J. Vac. Sci. Technol. B2, 827 (1984)10.1116/1.582902 ↗
12. J.I. Pankove:Hybrid Structures, inSemiconductors & Semimetals, Vol.21, Pt. D, ed. by J.I. Pankove (Academic, Orlando 1984) p. 261
13. M. Matsumura, H. Hayama: Proc. IEEE68, 1349 (1980)10.1109/PROC.1980.11863 ↗
14. A.J. Snell, W.E. Spear, P.G. LeComber, K. Mackenzie: Appl. Phys. A26, 83 (1981)10.1007/BF00616653 ↗
15. K.D. Mackenzie, A.J. Snell, I. French, P.G. LeComber, W.E. Spear: Appl. Phys. A31, 87 (1983)10.1007/BF00616310 ↗
16. M. Böhm, J. Houghton, S. Salamon:The Influence of Bulk and Interface Gap States on the Performance of Amorphous Silicon Thin Film Transistors, presented at the MRS Spring Meeting, Anaheim, CA (April 21?25, 1987)10.1557/PROC-95-481 ↗
17. N. Nara, M. Matsumura: Jpn. J. Appl. Phys.21, Suppl. 21?1, 257 (1982)