journal article·1979-04

Electron traps in CdS single crystals obtained by admittance spectroscopy on the hetero- and Schottky junctions

A. Kobayashi, T. Mori

Applied Physics· Volume 18· Issue 4
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (23)

Show source-provided references
1. G.I.Roberts, C.R.Crowell: J. Appl. Phys.41, 1767–1776 (1970)10.1063/1.1659102 ↗
2. D.L.Lang: J. Appl. Phys.45, 3001–3022, 3023–3032 (1974)
3. G.M.Martin, E.Fogarassy, E.Fabre: J. Appl. Phys.47, 264–266 (1976)10.1063/1.322310 ↗
4. C.T.Sah, W.W.Chan, H.S.Fu, J.W.Walker: Appl. Phys. Lett.20, 193–195 (1972)10.1063/1.1654104 ↗
5. M.G.Buehier: Solid State Electron.15, 69–79 (1972)10.1016/0038-1101(72)90068-8 ↗
6. A.Kobayashi: J. Appl. Phys.49, 934–935 (1978)10.1063/1.324632 ↗
7. D.L.Losce: Appl. Phys. Lett.21, 54–56 (1972); J. Appl. Phys.46, 2204–2214 (1975)10.1063/1.1654276 ↗
8. R.H.Bube: InPhysics and Chemistry of II–VI Compounds, ed. by M. Aven and J. S. Prener (North-Holland, Amsterdam 1967) pp. 683–689
9. D.A.Cusano: Solid State Electron.6, 217–232 (1963)10.1016/0038-1101(63)90078-9 ↗
10. A.M.Cowley, S.M.Sze: J. Appl. Phys.36, 3212–3220 (1965)10.1063/1.1702952 ↗
11. W.G.Spitzer, C.A.Mead: J. Appl. Phys.34, 3061–3069 (1963)10.1063/1.1729121 ↗
12. P.F.Lindquist, R.H.Bube: J. Electrochem. Soc.119, 936–944 (1972)10.1149/1.2404372 ↗
13. R.Marshall, S.S.Mitra: J. Appl. Phys.36, 3882–3883 (1965)10.1063/1.1713966 ↗
14. E.P.Warekois, M.C.Lavine, A.M.Mariano, H.C.Gatos: J. Appl. Phys.33, 690–696 (1962);37, 2203 (1966)10.1063/1.1702489 ↗
15. A.G.Milnes, D.L.Feucht:Heterojunctions and Metalsemiconductor Junctions (Academic Press, New York, London 1972) pp. 34–3610.1016/B978-0-12-498050-1.50008-8 ↗
16. A.M.Goodman: J. Appl. Phys.34, 329–338 (1963)10.1063/1.1702608 ↗
17. K.W.Böer: Phys. Rev.13, 5373–5384 (1976); phys. stat. sol.40, 355–384 (1977)10.1103/PhysRevB.13.5373 ↗
18. The diffusion voltages in single crystal CdS−CuxS heterojunctions have been shown in [11], and the voltages in metal-CdS Schottky junctions have been reported by Spitzer and Mead (see [10])
19. W.W.Piper, D.T.F.Marple: J. Appl. Phys. (Suppl.)32, 2237–2241 (1961)10.1063/1.1777050 ↗
20. The parameters of electron traps in CdS obtained by thermally stimulated conductivity are given in [8]. The parameters obtained by the decay of photoconductivity in the crystal have been reported by Nicholas and Woods: Brit. J. Appl. Phys.15. 783–795 (1964)10.1088/0508-3443/15/7/302 ↗
21. J.S.Blakemore:Semiconductor Statistics (Pergamon Press, London 1962) pp. 118–120
22. W.W.Piper, R.E.Halsted: Proc. Intern. Conf. on Semicond. Phys. held in Prague (1960) pp. 1046–1048
23. A.G.Milnes:Deep Impurities in Semiconductors (Wiley, New York 1973) pp. 191–214